Features

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Low-voltage drive (4V).

5) Easily designed drive circuits.

6) Easy to parallel.

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Features

Multiple Schottky Barrier Diodes Middle Power MOSFET

Small Surface Mount Package

Pb Free/RoHS Compliant

N-Channel 250V 8A (Tc) 2.23W (Ta), 35W (Tc) Through Hole TO-220FM

MOSFET 10V Drive Nch MOSFET

The R6020ANJTL parts manufactured by ROHM are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The R6020ANJTL components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the R6020ANJTL Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.

The R6020835ESYA is DIODE GEN PURP 800V 350A DO205AB, that includes Bulk Packaging, they are designed to operate with a DO-205AB, DO-9, Stud Package Case, Mounting Type is shown on datasheet note for use in a Chassis, Stud Mount, that offers Supplier Device Package features such as DO-205AB, DO-9, Speed is designed to work in Standard Recovery >500ns, > 200mA (Io), as well as the Standard Diode Type, the device can also be used as 50mA @ 800V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.5V @ 800A, the device is offered in 800V Voltage DC Reverse Vr Max, the device has a 350A of Current Average Rectified Io, and Reverse Recovery Time trr is 2μs, it has an Operating Temperature Junction range of -45°C ~ 150°C.

The R6020825HSYA is DIODE GEN PURP 800V 250A DO205AB, that includes 2V @ 800A Voltage Forward Vf Max If, they are designed to operate with a 800V Voltage DC Reverse Vr Max, Supplier Device Package is shown on datasheet note for use in a DO-205AB, DO-9, that offers Speed features such as Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time trr is designed to work in 1μs, as well as the Bulk Packaging, the device can also be used as DO-205AB, DO-9, Stud Package Case, it has an Operating Temperature Junction range of -45°C ~ 150°C, the device is offered in Chassis, Stud Mount Mounting Type, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 50mA @ 800V, and the Current Average Rectified Io is 250A.

The R6020822PSYA is DIODE GEN PURP 800V 220A DO205AB, that includes 220A Current Average Rectified Io, they are designed to operate with a 50mA @ 800V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Chassis, Stud Mount, it has an Operating Temperature Junction range of -45°C ~ 150°C, as well as the DO-205AB, DO-9, Stud Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 500ns, the device is offered in Fast Recovery = 200mA (Io) Speed, the device has a DO-205AB, DO-9 of Supplier Device Package, and Voltage DC Reverse Vr Max is 800V, and the Voltage Forward Vf Max If is 2.75V @ 800A.

N-Channel 60V 300mA (Ta) 200mW (Ta) Surface Mount SST3

Features

1) Low on-resistance.

2) High ESD

3) High-speed switching.

4) Low-voltage drive (4V).

5) Easily designed drive circuits.

6) Easy to use in parallel.

N-Channel 60V 22A (Ta) 20W (Ta) Surface Mount CPT3

MOSFET Nch 60V 22A MOSFET

P-Channel 20V 3A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)

MOSFET P-CH 20V 3A TSMT6

■ MOSFETs

● Small Signal MOSFET Series

● Middle Power MOSFET Series

● Power MOSFET Series

■ Selector Guide for Automotive MOSFETs (AEC-Q101)

■ Bipolar Transistors (Surface mount type)

■ Transistor Array

■ Complex Bipolar Transistors

■ Digital Transistors

■ Complex Digital Transistors

■ Packages

■ Part No. Explanation

ISO/TS 16949-approved

N-Channel 500V 5A (Ta) 35W (Tc) Through Hole TO-220FM

P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount SST3

MOSFET 4V Drive Pch MOSFET

Features

4Ｖ-drive type

Pch Small-signal MOSFET

Small Surface Mount Package

Pb Free/RoHS Compliant