MOSFET N-CH 30V 4A SOT23-3L 

The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET

The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET 

The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications

20V P-Channel MOSFET

The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

20V N-Channel MOSFET 

The AO3414 uses advanced trench technology to  provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

20V P-Channel MOSFET 

The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

20V N-Channel MOSFET 

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected

20V P-Channel MOSFET   

The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

100V N-Channel MOSFET 

 The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting.

30V N-Channel AlphaMOS 

  • Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5VGS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant   Application 

 • DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industrial

30V P-Channel MOSFET

The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

40V N-Channel MOSFET                                             

The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well  controlled with a “Schottky style” soft recovery body diode.

30V P-Channel MOSFET

The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications

P-Channel Enhancement Mode Field Effect Transistor 

The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. 

 -RoHS Compliant

 -Halogen Free*

P-Channel Enhancement Mode Field Effect Transistor   

 The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for high current load applications.

 -RoHS Compliant

 -Halogen Free*

20V N-Channel MOSFET 

The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch

and battery protection applications.

60V N-Channel MOSFET

The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those  devices are suitable for use as a load switch or in PWM applications.

60V N-Channel MOSFET                                         

The AOD444/AOI444 combine advanced trench MOSFET  technology with a low resistance package to provide  extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.

250V,14A N-Channel MOSFET                                     

The AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along  with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

300V,11.5A N-Channel MOSFET                                           

The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 

30V N-Channel AlphaMOS                                         

• Latest Trench Power MOSFET technology

• Very Low RDS(on) at 4.5V VGS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant                         

 Application                                                   

• DC/DC Converters in Computing

• Isolated DC/DC Converters in Telecom and Industrial

30V P-Channel MOSFET                                             

The AON6407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch

and battery protection applications.

N-Channel Enhancement Mode Field Effect Transistor 

The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. 

30V P-Channel MOSFET

The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

N-Channel Enhancement Mode Field Effect Transistor 

 The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and  operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3414L ( Green Product ) is offered in a lead-free package.

20V N-Channel MOSFET 

The AO3420 uses advanced trench technology to provide 20V excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch.

60V N-Channel MOSFET

 Trench Power MV MOSFET technology 60V

 • Low RDS(ON)

 • Low Gate Charge

 • ESD protected

 • AO4262E SO-8 Tape & Reel 3000    Applications

 • High efficiency power supply

 • Secondary synchronus rectifier

60V N-Channel AlphaSGT 

• Trench Power AlphaSGTTM technology 

 • Low RDS(ON)

 • Low Gate Charge

 • ESD protected                                       

  Applications 

 • High efficiency power supply

 • Secondary synchronus rectifier

20V N-Channel MOSFET 

• Trench Power MOSFET technology

 • Low RDS(ON)

 • RoHS and Halogen-Free Compliant  Applications   

• DC/DC Converters in Computing, Servers, and POL

 • Battery protection switch