• Latest Trench Power AlphaMOS (αMOS MV) technology

• Very Low RDS(ON)

• Low Gate Charge

• Optimized for fast-switching applications

• RoHS and Halogen-Free Compliant                         

Application                                                 

• Synchronus Rectification in DC/DC and AC/DC Converters

• Isolated DC/DC Converters in Telecom and Industrial

The IDW30C65D2 from Infineon Technologies is a Power Diode with Forward Current 15 to 30 A, Forward Voltage 1.6 to 2.2 V, Repetitive Peak Reverse Voltage 650 V, Non-Repetitive Peak Forward Current 100 A, Recovery Time 51 nS. 

Summary of Features:

1.35 V temperature-stable forward voltage (VF)

Highest softness-factor for ultimate softness and low EMI filtering

Lowest Irrm to provide low turn-on losses on the boost switch

For applications switching between 18 kHz and 40 kHz

Potential Applications:

Telecom

Server

PC Power

UPS

Welding

Adapter

Air condition

Home appliance

AC-DC

Advanced Process Technology

Ula Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche RatedLead-Free                             

 Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve exemely low on-resistance per silicon area. This benefit, combined with the fast  witching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an exemely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-indusial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 conibute to its wide acceptance throughout the indusy. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.                 

Advanced Process Technology

Ula Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche RatedLead-Free                               

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve exemely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an exemely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-indusial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 conibute to its wide acceptance throughout the indusy.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF640NL) is available for lowprofile application.                 

Planar cell sucture for wide SOA

Optimized for broadest availability from disibution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Indusy standard surface-mount power package

Capable of being wave-soldered                                   

RoHS Compliant

Low RDS(on)

Dynamic dv/dt Rating

Fast Switching

Dual N-Channel MOSFET

Planar cell sucture for wide SOA

Optimized for broadest availability from disibution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Indusy standard surface-mount power package

Capable of being wave-soldered                                     

RoHS Compliant

Low RDS(on)

Dynamic dv/dt Rating

Fast Switching

Dual P-Channel MOSFET

Planar cell sucture for wide SOA

Optimized for broadest availability from disibution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Indusy standard surface-mount power package

Capable of being wave-soldered                                     

RoHS Compliant

Indusy-leading quality

Fully Characterized Avalanche Voltage and Current

Low Gate-to-Drain Charge to Reduce Switching Losses

Fully Characterized Capacitance Including Effective Coss to Simplify Design

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate-drive voltage (called normal level)

Industry standard surface-mount power package

Capable of being wave-soldered

RoHS Compliant

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance                                       

RoHS Compliant

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance                                   

Synchronous MOSFET for Notebook

   Processor Power

Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in

Networking Systems

Lead-Free

High Frequency 3.3V and 5V input Point- of-Load Synchronous Buck Converters for Netcom and Computing Applications

Power Management for Netcom, Computing and Portable Applications

Lead-Free                                                     

 
Ultra-Low Gate Impedance

Very Low RDS(on)

Fully Characterized Avalanche Voltage and Current

Optimized for broadest availability from distribution partners

Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)

Reduced design complexity in high-side configuration (vs N-channel device)

Easier interface to Microcontroller (vs N-channel device)

Low specific on-state resistance (RDS(on)*A)

Very low energy storage in output capacitance (Eoss) @400V

Low gate charge (Qg)

Fieldproven CoolMOS™ quality

CoolMOS™ technology has been manufactured by Infineon since 1998

650V Cool MOSªCE Power Transistor Cool MOS™ isa revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. Cool MOS™CE is a price-er form an ce optimized platform enabling to target cost sensitive application sin Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefit so fa fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

The latest 800V Cool MOS™ P7  series sets a new bench mark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use,resulting from Infineon’s over 18 years

pioneering super junction technology innovation.

Potential applications:

Recommended for hard and soft switching fly back to pologies for LED Lighting, low power Charger sand Adapters,Audio, AUX power and Industrial power. Also suitable for PFC stage in Consumer applications and Solar.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. 

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard through-hole power package

High-current rating                                               

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.                             

 Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard through-hole power package

High-current rating  

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.                                         

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard through-hole power package

High-current carrying capability package

Applications

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits     

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.                               

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard through-hole power package

High current rating                             

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.                             

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applica

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applica

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IPD050N03L G Infineon Technologies Transistor MOSFET N-CH, 30V, 50A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0042ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power , RoHS

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)                       

Potential Applications:

Onboard charger

Notebook

Mainboard

DC-DC

VRD/VRM

Motor control

LED